preliminary hexfet ? power mosfet pd - 9.1559a fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. 8/25/97 so-8 v dss = 30v r ds(on) = 0.10 w IRF9956 description recommended upgrade: irf7303 or irf7313 lower profile/smaller equivalent: irf7503 symbol maximum units drain-source voltage v ds 30 gate-source voltage v gs 20 t a = 25c 3.5 t a = 70c 2.8 pulsed drain current i dm 16 continuous source current (diode conduction) i s 1.7 t a = 25c 2.0 t a = 70c 1.3 single pulse avalanche energy ? e as 44 mj avalanche current i ar 2.0 a repetitive avalanche energy e ar 0.20 mj peak diode recovery dv/dt ? dv/dt 5.0 v/ ns junction and storage temperature range t j, t stg -55 to + 150 c thermal resistance ratings parameter symbol limit units maximum junction-to-ambient ? r q ja 62.5 c/w absolute maximum ratings ( t a = 25c unless otherwise noted) continuous drain current ? maximum power dissipation ? a i d p d v w d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 l generation v technology l ultra low on-resistance l dual n-channel mosfet l surface mount l very low gate charge and switching losses l fully avalanche rated
IRF9956 parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC 0.82 1.2 v t j = 25c, i s = 1.25a, v gs = 0v ? t rr reverse recovery time CCC 27 53 ns t j = 25c, i f = 1.25a q rr reverse recoverycharge CCC 28 57 nc di/dt = 100a/s ? source-drain ratings and characteristics CCC CCC CCC CCC 16 1.7 a s d g ? surface mounted on fr-4 board, t 10sec. ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 2.0a, di/dt 100a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 22mh r g = 25 w , i as = 2.0a. ? pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.015 CCC v/c reference to 25c, i d = 1ma CCC 0.06 0.10 v gs = 10v, i d = 2.2a ? CCC 0.09 0.20 v gs = 4.5v, i d = 1.0a ? v gs(th) gate threshold voltage 1.0 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance CCC 12 CCC s v ds = 15v, i d = 3.5a CCC CCC 2.0 v ds = 24v, v gs = 0v CCC CCC 25 v ds = 24v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 24v gate-to-source reverse leakage CCC CCC -100 v gs = -24v q g total gate charge CCC 6.9 14 i d = 1.8a q gs gate-to-source charge CCC 1.0 2.0 nc v ds = 10v q gd gate-to-drain ("miller") charge CCC 1.8 3.5 v gs = 10v, see fig. 10 ? t d(on) turn-on delay time CCC 6.2 12 v dd = 10v t r rise time CCC 8.8 18 i d = 1.0a t d(off) turn-off delay time CCC 13 26 r g = 6.0 w t f fall time CCC 3.0 6.0 r d = 10 w ? c iss input capacitance CCC 190 CCC v gs = 0v c oss output capacitance CCC 120 CCC pf v ds = 15v c rss reverse transfer capacitance CCC 61 CCC ? = 1.0mhz, see fig. 9 electrical characteristics @ t j = 25c (unless otherwise specified) i gss a w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns
IRF9956 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics 1 10 100 0.1 1 10 20s p ulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bott om 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20s p ulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bott om 3.0v 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-s ourc e c urre nt (a ) a v = 1 0 v 20s pulse w idth ds fig 4. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0 v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a
IRF9956 fig 8. maximum avalanche energy vs. drain current fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage fig 4. normalized on-resistance vs. temperature 0 20 40 60 80 100 25 50 75 100 125 150 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top 0.89a 1.6a bottom 2.0a d -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 2.2a 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0 3 6 9 12 15 a i = 3 .5a d gs v , gate-to-source voltage (v) r ds (on) , drain-to-source on resistance ( w ) 0.04 0.06 0.08 0.10 0.12 0 24681012 a i , drain c urrent (a) d v = 10v gs v = 4.5v gs r ds (on) , drain-to-source on resistance ( w )
IRF9956 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage 0 50 100 150 200 250 300 350 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0 v, f = 1m hz c = c + c , c sho rte d c = c c = c + c gs iss gs gd ds rss gd oss ds gd c is s c oss c rss 0 2 4 6 8 10 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 1.8a v = 10v ds 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
IRF9956 package outline so8 outline so8 part marking information k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim in c h e s m illim et er s m in m a x min m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 basic 1.27 basic e1 .025 basic 0.635 basic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. d imensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. d ime n s io n s a r e s h o w n in m illime t er s (in c h e s) . 4. outline conforms to jedec outline ms-012aa. dimension does not include mold protrusions mold pr otru sions not to exceed 0.25 (.006). d im en s io n s is t h e le n g t h o f le ad f o r so ld e r in g t o a s u b st r a t e.. 5 6 a1 e1 example : this is an irf7101 date code (yw w ) y = last digit of the year ww = week w afer lo t co de (last 4 digits) xxxx bottom part number top international rectifier lo g o f7101 312 q
IRF9956 so8 dimensions are shown in millimeters (inches) tape & reel information 330.00 (12 .9 92 ) max. 1 4.4 0 ( .5 66 ) 1 2.4 0 ( .4 88 ) not es : 1. con tr olling dim ension : millimeter. 2. outline conforms to eia-481 & eia-541. feed dir ectio n term inal nu m ber 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1 . c o n t r o ll in g d im en s io n : m ill im e t e r . 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 8/97
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